國立中興大學物理學系暨奈米科學研究所

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林彥甫

Tel 22840427 分機291　　 奈米電子元件與應用 低溫物理實驗 固態物理實驗
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  • 學歷 Education
    國立交通大學電子物理學系博士
    東海大學物理系學士
     
    經歷 Work Experience
    國立中興大學物理系副教授(2017/02-)
    國立中興大學物理系助理教授(2014/02-2017/01)
    日本物質材料研究所MANA研究員(2013/01-2014/01)
    國立交通大學電子物理學系博士後研究員(2010/08-2013/01)
  • 奈米電子元件與應用
    低溫物理實驗
    固態物理實驗
    1. Y. Xu*, H. Sun, W. Li, Y. F. Lin*, F. Balestra, G. Ghibaudo, and Y. Y. Noh*; “Exploring the Charge Transport in Conjugated Polymers” Adv. Mater. 1702729 (2017)
    2. Y. F. Lin, C. H. Chang, T. C. Hung, Z. Liu, J. Fang, and W. B. Jian*; “Nanocontact Disorder in InP Nanowire Devices for the Enhancement of Visible Light and Oxygen Gas Sensitivities” Procedia IUTAM, 21, 33-39 (2017)
    3. J. J. Lai, D. Jian, Y. F. Lin, M. M. Ku, and W. B. Jian*; “Electron Transport in the Two-dimensional Channel Material-Zinc Oxide Nanoflake” Physica B DOI:10.1016/j.physb.2017.03.041 (2017)
    4. Y. M. Chang*, M. L. Lin, T. Y. Lai, C. H. Chen, H. Y. Lee, C. M. Lin, Y. C. Sermon Wu, Y. F. Lin*, and J. Y. Juang*; “Broadband Omnidirectional Light Trapping in Gold-Decorated ZnO Nanopillars Array” ACS Appl. Mater. Interfaces 9, 11985 (2017)
    5. D. Jian, J. J. Lai, Y. F. Lin*, J. Zhai, I. L Li, F. Tian, S. Wang, P. Hua, M. M. Ku, W. B. Jian*, S. Ruan*, and Z. Tang; “Electron Hopping Transport in 2D Zinc Oxide Nanoflakes” 2D Mater. 4, 025028 (2017)
    6. C. K. Hsu, C. Y. Lin, W. Li*, H. Sun, Y. Xu*, Z. Hu, Y. M. Chang, Y. W. Suen, and Y. F. Lin*; “The Impact of Electrical Contacts and Contact-Induced Ultralow Noise Amplitudes in Layered Transistors” 2D Mater. 3, 045015 (2016)
    7. (Invited paper) Y. M. Chang*, C. Y. Lin, Y. F. Lin*, and K. Tsukagoshi*; “Two-dimensional MoTe2 Materials: From Synthesis, Identification, and Charge Transport to Electronic Applications” Jpn. J. Appl. Phys. 55, 1102A1 (2016)
    8. Y. Xu*, H. Sun, E. Y. Shin, Y. F. Lin, W. Li*, and Y. Y. Noh*; “Planar-Processed Polymer Transistor” Adv. Mater. 28, 8531 (2016)
    9. Y. F. Lin*, Y. Xu, C. Y. Lin, Y. W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno, and K. Tsukagoshi*; “Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors” Adv. Mater. 27, 6612 (2015)
    10. Y. F. Lin*, C. H. Chang, T. C. Hung, W. B. Jian*, K. Tsukagoshi, Y. H. Wu, L. Chang, Z. Liu and J. Fang; “Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities” Sci. Rep. 5, 13035 (2015)
    11. S. Nakaharai*, M. Yamamoto, K. Ueno, Y. F. Lin, S. L. Li, and K. Tsukagoshi*; “Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors” ACS Nano 9, 5976 (2015)
    12. S. L. Li*, K. Komatsu, S. Nakaharai, Y. F. Lin, M. Yamamoto, X. Duan, and K. Tsukagoshi*; “Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers” ACS Nano 8, 12836 (2014)
    13. H. Sun, Q. Wang, Y. Li*, Y. F. Lin, Y. Wang, Y. Yin, Y. Xu, C. Liu, K. Tsukagoshi*; “Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation” Sci. Rep. 4, 7227 (2014)
    14. M. Yamamoto*, S. T. Wang, M. Ni, Y. F. Lin, S. L. Li, S. Aikawa, W. B. Jian, K. Ueno, K. Wakabayashi, and K. Tsukagoshi*; “Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe2” ACS Nano 8, 3895 (2014)
    15. Y. F. Lin*, Y. Xu, S. T. Wang, S. L. Li, M. Yamamoto, A. A. Ferreira, W. Li, H. Sun, W. B. Jian, K. Ueno, and K. Tsukagoshi*; “Ambipolar MoTe2 transistor and their applications in logic circuits”, Adv. Mater. 26, 3263 (2014)
    16. Y. F. Lin*, W. Li, S. L. Li, Y. Xu, K. Komatsu, A. A. Ferreira, and K. Tsukagoshi*; “Barrier inhomogeneities at vertically stacked graphene-based heterostrcuters”, Nanoscale 6, 795 (2014)
    17. Y. Xu*, C. Liu, W. Scheideler, S. L. Li, W. Li, Y. F. Lin, F. Balestra, G. Ghibaudo, and K. Tsukagoshi*; “Underdstanding pentacene growth dynamics by low-frequency noise measurement”, IEEE Electron Device Lett. 34, 1298 (2013)
    18. S. C. Chiu, J. S. Jhang, Y. F. Lin, S. Y. Hsu, J. Fang, and W. B. Jian*; “ Nanocrystal shape and nanojunction effects on electron transport in nanocrystal-assembled bulks”, Nanoscale 5, 8555 (2013)
    19. S. L. Li*, K. Wakabayashi*, Y. Xu, S. Nakaharai, K. Komatsu, W. W. Li, Y. F. Lin, A. A. Ferreira, and K. Tsukagoshi*; “Coulomb impurity induced thickness-dependent carrier scattering in ultrathin field-effect transistors”, Nano Lett. 13, 3545 (2013)
    20. W. Li*, S. L. Li, K. Komastu, A. A. Ferreira, Y. F. Lin, Y. Xu, M. Osada, T. Sasaki, and K. Tsukagoshi*; “Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric”, Appl. Phys. Lett. 103, 023113 (2013)
    21. K. J. Sankaran, Y. F. Lin, W. B. Jian, K. Panda, B. Sundaravel, C. L. Dong, N. H. Tai*, and I. N. Lin*, “Structural and electrical properties of n-type conducting diamond nanowires”, ACS Appl. Mater. Interfaces 5, 1294 (2013)
    22. Y. F. Lin*, S. T. Wang, C. C. Pao, Y. C. Li, C. C. Lai, C. K. Lin, S. Y. Hsu, and W. B. Jian*; “Probing into the metal-graphene interface by electron transport measurements”, Appl. Phys. Lett. 102, 033107 (2013)

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