國立中興大學物理學系暨奈米科學研究所

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張茂男

Tel 22840427 分機558　　 表面科學研究 / 掃描探針技術 / 半導體物理 / 電性掃描探針顯微術 / 表面分析技術
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  • 學歷 Education
    國立中央大學電機工程研究所博士
    國立中央大學物理研究所碩士
    國立中央大學物理系
     
    經歷 Work Experience
    國立中興大學副教授(2010/02-present)
    國家奈米元件實驗室研究員(2006/01-2010/01)
    國家奈米元件實驗室組長(2005/09-2010/01)
    逢甲大學副教授(2004/02-2005/07)
    國家奈米元件實驗室副組長(2003/10-2005/08)
    國家奈米元件實驗室副研究員(1999/10-2005/12)
  • 表面科學研究 / 掃描探針技術 / 半導體物理 / 電性掃描探針顯微術 / 表面分析技術
    1. Chun-Ting Lina, Hung Ji Huanga, Mao-Nan Changb, Po-Li Chena,Chien-Nan Hsiaoa, Ming-Hua Shiaoa and Fan-Gang Tsengc“Plasmonic Catalytic Layer for Visible-Light Enhanced Methanol Oxidation Reaction” ECS Meeting Abstracts, MA2016-02 3675(2016)
    2. Lin, Chun-Ting; Chang, Mao-Nan; Huang, Hung Ji; Chen, Ching-Hao; Sun, Ru-Jing; Liao, Bo-Huei; Chau, Yuan-Fong Chou; Hsiao, Chien-Nan; Shiao, Ming-Hua; Tseng, Fan-Gang, "Rapid fabrication of three-dimensional gold dendritic nanoforests for visible light-enhanced methanol oxidation”, ELECTROCHIMICA ACTA, 192, 15-21 (2016).
    3. Fu-Ju Hou, Po-Jung Sung, Fu-Kuo Hsueh, Chien-Ting Wu, Yao-Jen Lee, Mao-Nang Chang, Yiming Li, and Tuo-Hung Hou, "32-nm Multigate Si-nTFET with Microwave-Annealed Abrupt Junction”, IEEE TRANSACTIONS ON ELECTRON DEVICES, 63, 1808 (2016/5).
    4. Lin, CT; Chang, MN; Huang, HJ; Chen, CH; Sun, RJ; Liao, BH; Chau, YFC; Hsiao, CN; Shiao, MH; Tseng, FG, “Rapid fabrication of three-dimensional gold dendritic nanoforests for visible light-enhanced methanol oxidation”, Electrochimica Acta 192,15–21, (2016)
    5. Chun-Ting Lin, Yu-Wei Chen, James Su, Chien-Ting Wu, Chien-Nan Hsiao, Ming-Hua Shiao, and Mao-Nan Chang*, “Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy”, Nanoscale Research Letters, 10, 401 (2015/10).
    6. Chun-Ting Lin, Ming-Hua Shiao, Mao-Nan Chang, Nancy Chu, Yu-Wei Chen, Yu-Hsuan Peng, Bo-Huei Liao, Hung-Ji Huang, Chien-Nan Hsiao, and Fan-Gang Tseng, “A facile approach to prepare silicon-based Pt-Ag tubular dendritic Nano-forests (tDNFs) for solar-light-enhanced methanol oxidation reaction”, Nanoscale Research Letters, 10, 74 (2015/2).
    7. Chun-Ting Lin, Ming-Han Yu, James Su, Po-Li Chen, Ming-Hua Shiao, Akos Nemcsics, and Mao-Nan Chang*, “Localized Electroless Ag Plating at a Tip Apex for Scanning Kelvin Probe Microscopy”, Japanese Journal of Applied Physics, 52, 06GF03 (2013/6).
    8. M. N. Chang, C. W. Hu, T. H. Chou, and Y. J. Lee, “Contrast distortion induced by modulation voltage in scanning capacitance microscopy”, Applied Physics Letters, 101, 083503 (2012/8). (IF: 3.844)
    9. C.-H. Chen, C.-E. Cheng, C.-C. Hsu, M. N. Chang, H. W. Shiu, and F. S.-S. Chien, “Local interdiffusion at buried TiN/Si interfaces with scanning probes”, Journal of Physics D: Applied Physics 45, 215307 (2012/5). (IF: 2.544)
    10. Hung-Min Lin, Mao-Nan Chang, Yue-Sheng Lin, and Chao-Chia Cheng, “The Manufacturing of a Metallic Nano-Cluster at a Tip Apex for Field-Sensitive Microscopy Applications”, J. Nanosci. Nanotechnol. 10, 4459 (2010/7). (IF: 1.352)
    11. W. C. Chien, Y. C. Chen, E. K. Lai, Y. D. Yao, P. Lin, S. F. Horng, J. Gong, T. H. Chou, H. M. Lin, M. N. Chang, Y. H. Shih, K. Y. Hsieh, R. Liu, and Chih-Yuan Lu, “Unipolar Switching Behaviors of RTO WOX RRAM”, IEEE Electron Device Letters 31, 126 (2010/2). (IF: 2.719)
    12. Yung-Ling Lan, Hung-Cheng Lin, Hsueh-Hsing Liu, Geng-Yen Lee, Fan Ren, Stephen J. Pearton, Mao-Nan Chang, Jen-Inn Chyi, “Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures”, Applied Physics Letters 94, 243502 (2009/6). (IF: 4.096)
    13. Mao-Nan Chang, Ruo-Syuan Lin, Hsueh-Hsing Liu, Hung-Min Lin, Hung-Cheng Lin, and Jen-Inn Chyi, “Investigations of Photo-assisted Conductive Atomic Force Microscopy on III-Nitrides”, Microelectronics Journal 40, 353 (2009/2). (IF: 0.848)
    14. G. T. Chen, C. H. Chan, C. H. Hou, H. H. Liu, N. W. Shiu, M. N. Chang, C. C. Chen, J.-I. Chyi, “Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by microsphere lithography”, Gallium Nitride Materials and Devices III 6894, 89408 (2008).
    15. C. C. Hsu, R. Q. Hsu, Y. H. Wu, T. W. Chi, C. H. Chiang, J. F. Chen, M. N. Chang, “Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence”, Ultramicroscopy 108, 1495 (2008). (IF: 2.629)
    16. M. N. Chang, T. H. Chou, C. Y. Yang, and J. H. Liang, “The factors influencing the stability of scanning capacitance spectroscopy”, Microscopy of Semiconducting Materials 120, 467 (2008).
    17. Guan-Ting Chen, Shih-Pang Chang, Jen-Inn Chyi, and Mao-Nan Chang, “Growth and characterization of crack-free semipolar InGaN/GaN multiple-quantum-well on v-grooved (001)Si substrates”, Applied Physics Letters 92, 241904 (2008/6). (IF: 4.096)
    18. Guan-Ting Chen, Jen-Inn Chyi, Chia-Hua Chan, Chia-Hung Hou, Chii-Chang Chen, and Mao-Nan Chang, “Crack-free GaN grown on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography”, Applied Physics Letters 91, 261910 (2007/12). (IF: 4.068)
    19. T. C. Cheng, P. Y. Chen, W. J. Huang, K. H. Hsu, H. T. Hsueh, M. N. Chang, and J. S. Wu, “Nanomanipulation Measurement and PIC Simulation of Field-emission Properties from a Single Crystallized Silicon Nano-Emitter”, Nanotechnology 18, 225503 (2007/5). (IF: 3.511)
    20. M. H. Cheng, T. C. Cheng, W. J. Huang, M. N. Chang, “Influence of oxygen diffusion on residual stress for tantalum thin films”, Journal of Vacuum Science & Technology B 25, 147 (2007/1-2). (IF: 1.548)
    21. M. N. Chang, C. Y. Chen, M. J. Yang, and C. H. Chien, “Photovoltaic effect on the conductive atomic force microscopic characterization of thin dielectric films”, Applied Physics Letters 89, 133109 (2006/9). (IF: 3.977)
    22. Jooyoung Lee, Mao-Nan Chang, and Kang L. Wang, “Size dependence of hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO2 patterned Si template”, Microelectronics Journal 37, 1523 (2006/7). (IF: 0.651)
    23. M. Zhao, W.-X. Ni, P. Townsend, S.A. Lynch, D.J. Paul, C. C. Hsu, and M. N. Chang, “Low-temperature Molecular Beam Epitaxy Growth of Si/SiGe THz Quantum Cascade Structures on Virtual Substrates”, Thin Solid Films 508, 24 (2006/6). (IF: 1.666)
    24. T. C. Cheng, J. Shieh, W. J. Huang, M. C. Yang, M. H. Cheng, H. M. Lin, and M. N. Chang, “Hydrogen Plasma Dry Etching Method for Field Emission Application”, Applied Physics Letters 88, 263118 (2006/6). (IF: 3.977)
    25. T. C. Cheng, H. T. Hsueh, W. J. Huang, M. N. Chang, J. S. Wu and S. C. Kung, “ Measurement of field emission properties of a single crystal silicon emitter using scanning electron microscopy”, Microscopy of Semiconducting Materials 107, 351 (2005/10)
    26. S. D. Wang, M. N. Chang, C. Y. Chen, and T. F. Lei, “Observation of Localized Breakdown Spots in Thin SiO2 films using Scanning Capacitance Microscopy”, Electrochemical and Solid State Letters 8, G233 (2005/9). (IF: 1.970)
    27. M. N. Chang, C. Y. Chen, W. J. Huang, and T. C. Cheng, “Approach to nonphotoperturbed differential capacitance measurements: A front-wing cantilever”, Applied Physics Letters 87, 023102 (2005/7). (IF: 4.127)
    28. C. C. Leu, C. H. Chien, C. Y. Chen, M. N. Chang, F. Y. Hsu, C. T. Hu and Y. F. Chen, “Variations of Differential Capacitance in SrBi2Ta2O9 Ferroelectric Films Induced by Photoperturbation”, Applied Physics Letters 86, 092906 (2005/2). (IF: 4.127)
    29. T. C. Cheng, H. T. Hsueh, W. J. Huang, S. C. Kung, J. S. Wu, and M. N. Chang, “Measurement of Field-Emission Properties of a Single Crystallized Silicon Emitter Using Scanning Electron Microscopy”, Springer Proceedings in Physics, 107, p. 351, (2005/10).
    30. G. T. Chen, C. C. Pan, C. S. Fang, T. C. Huang, J.-I. Chyi, M. N. Chang, S. B. Huang and J. T. Hsu,”High Reflectivity Pd/Ni/Al/Ti/Au Ohmic Contacts to P-type GaN for Ultraviolet Light-Emitting Diodes”, Applied Physics Letters 85, 2797 (2004/10). (IF: 4.308)
    31. M. N. Chang, C. Y. Chen, W. W. Wan, and J. H. Liang, “The influence of annealing sequence on p+/n junction observed by scanning capacitance microscopy”, Applied Physics Letters 84, 4705 (2004). (IF: 4.308)
    32. F. M. Pan, Y. B. Liu, Y. Chang, C. Y. Chen, T. G. Tsai, M. N. Chang, and J. T. Sheu, “Selective growth of carbon nanotube on scanning probe tips by microwave plasma chemical vapor deposition”, Journal of Vacuum Science & Technology B 22, 90 (2004). (IF: 1.664)
    33. C. C. Leu, C. H. Chien, C. Y. Chen, M. N. Chang, F. Y. Hsu, and C. T. Hu, “Contrast Mechanism of Ferroelectric Domains in Scanning Capacitance Microscopy”, Electrochemical and Solid State Letters 7, A327 (2004). (IF: 2.271)
    34. M. N. Chang, W. W. Wan, C. Y. Chen, J. H. Lai, J. H. Liang, and F. M. Pan, “Influence of annealing sequence on p+/n junction images studied by scanning capacitance microscopy”, Electrochemical and Solid State Letters 7, G90 (2004). (IF: 2.271)
    35. M. N. Chang, C. Y. Chen, F. M. Pan, J. H. Lai, W. W. Wan, and J. H. Liang, “Photovoltaic Effect on Differential Capacitance Profiles of Low-Energy-BF2+-Implanted Silicon Wafers”, Applied Physics Letters 82, 3955 (2003). (IF: 4.049)
    36. C. C. Leu, C. Y. Chen, C. H. Chien, M. N. Chang, F. Y. Hsu, and C. T. Hu, “Domain structure study of SrBi2Ta2O9 ferroelectric thin films by scanning capacitance microscopy”, Applied Physics Letters 82, 3493 (2003). (IF: 4.049)
    37. M. N. Chang, C. Y. Chen, and F. M. Pan, “Scanning Probe Analysis of Defects Induced by Slight Iron Contamination on Thermally Oxidized p-type Silicon Wafers”, International Journal of Nanoscience 2, 349 (2003).
    38. M. N. Chang, C. Y. Chen, F. M. Pan, T. Y. Chang, and T. F. Lei, “Observation of Differential Capacitance Images on Slightly Iron-Contaminated p-Type Silicon“, Electrochemical and Solid State Letters 5, G69 (2002). (IF: 2.505)
    39. C. C. Chuo, M. N. Chang, F. M. Pan, C. M. Lee, and J. –I. Chyi, “Effect of Composition Inhomogeneity on The Photoluminescence of InGaN/GaN Multiple Quantum Wells upon Thermal Annealing“, Applied Physics Letters 80, 1138 (2002). (IF: 4.207)
    40. M. N. Chang, T. Y. Chang, F. M. Pan, B. W. Wu and T. F. Lei, “An Investigation of Scanning Capacitance Microscopy on Iron-Contaminated p-type Silicon”, Electrochemical and Solid State Letters 4, G69 (2001). (IF: 2.505)
    41. M. N. Chang, N. -T. Yeh, C. M. Lu, K. C. Hsieh and J. -I. Chyi, “Selective Distribution of Arsenic Precipitates in Low-Temperature Grown III-V Heterostructures”, Applied Physics Letters 75, 52 (1999). (IF: 4.207)
    42. M. N. Chang, C. C. Chuo, K. C. Hsieh, N. -T. Yeh and J. -I. Chyi, “Role of Excess As in Low-Temperature Grown GaAs Subjected to BCl3 Reactive Ion Etching”, Applied Physics Letters 75, 3032 (1999). (IF: 4.207)
    43. M. N. Chang, K. C. Hsieh, T. -E. Nee, and J. -I. Chyi, “Effects of Point Defect Distribution on Arsenic Precipitation in Low-Temperature Grown III-V Arsenides”, Journal of Applied Physics 86, 2442 (1999). (IF: 2.281)
    44. M. N. Chang, K. C. Hsieh, T. -E. Nee, C. C. Chuo, and J.-I. Chyi, “Behavior of Arsenic Precipitation in Low-Temperature Grown III-V Arsenides”, Journal of Crystal Growth 201/202, 212 (1999). (IF: 1.529)
    45. N. -T. Yeh, T. -E. Nee, P. -W. Shiao, M. N. Chang, J. -I. Chyi, and C. T. Lee, "Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As Quantum Dots on Vicinal GaAs Substrates", Japanese Journal of Applied Physics 38, 550 (1999). (IF: 1.280)
    46. M. N. Chang, J. -W. Pan, J. -I. Chyi, K. C. Hsieh, and T. -E. Nee, “Effect of Column III Vacancy on Arsenic Precipitation in Low-Temperature Grown III-V Arsenides”, Applied Physics Letters 72, 587 (1998). (IF: 4.207)
    47. W. C. Lee, T. M. Hsu, S. C. Wang, M. N. Chang, and J. -I. Chyi, “The Fermi Level of Annealed Low-Temperature GaAs on Si-δ-Doped GaAs Grown by Molecular Beam Epitaxy”, Journal of Applied Physics 83, 486 (1998). (IF: 2.281)
    48. Y. A. Chen, N. Y. Liang, L. H. Laih, W. C. Tsay, M. N. Chang, J. W. Hong, “Improvement of Electroluminescence Characteristics of Porous Silicon Led by Using Amorphous-Silicon Layers”, Electronics Letters 33, 1489 (1997). (IF: 1.072)
    49. J. L. Hsieh, M. N. Chang, Y. S. Cheng, and J. -I Chyi, “Defects in Metamorphic InxAl1-xAs (x<0.4) Epilayers Grown on GaAs Substrates”, Journal of Applied Physics 82, 210 (1997). (IF: 2.281)
    50. Y. A. Chen, N. Y. Liang, L. H. Laih, W. C. Tsay, M. N. Chang, and J. W. Hong, “Improvement of Current Injection of Porous Silicon”, Japanese Journal of Applied Physics 36, 1574 (1997). (IF: 1.280)
    51. Y. A. Chen, B. F. Chen, W. C. Tsay, L. H. Laih, M. N. Chang, J. -I. Chyi, J. W. Hong, and C. Y. Chang, “Porous Silicon Light-Emitting Diode with Tunable Color”, Solid-State Electronics 41, 757 (1997). (IF: 0.913)
    52. J. L. Hsieh, M. N. Chang, Y. S. Cheng, and J. -I Chyi, “Defect Study on the Strain-Relaxed InxAl1-xAs Epilayers (x<0.4) Grown on GaAs”, Compound Semiconductors 155, 953 (1997).
    53. T. M. Hsu, Y. A. Chen, M. N. Chang, N. H. Lu, and W. C. Lee, “Line-Shape of Electromodulation in Uniform Electric-Field of Delta-Doped GaAs”, Journal of Applied Physics 75, 7489 (1994). (IF: 2.281)

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