國立中興大學物理學系

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龔志榮

Tel 22840427 分機712   奈米材料科學 / 光電元件及物理 / 原子層沉積製程 / 奈米分析
  • 學歷 Education
    美國北卡羅萊納州州立大學材料科學與工程博士
    國立清華大學材料學與工程碩士
    國立清華大學材料科學與工程學士
     
    經歷 Work Experience
    國立中興大學理學院副院長(2016-2018)
    國立中興大學物理系系主任(2007-2009)
    國立中興大學物理系教授(2005-present)
    國立中正大學光機電整合工程研究所教授(2004-2005)
    逢甲大學材料科學與工程學系教授(2003-2004)
    逢甲大學材料學與工程學系副教授(1992-2003)
  • 奈米材料科學 / 光電元件及物理 / 原子層沉積製程 / 奈米分析
  • 1.K.Y. Lo,P.H. Lin,H.J. Chen,J.R. Gong*,H.F Hsu,Y.W. Lee,and W.L. Chen,"Structural defects of GaN deposited on (111)Si with Gd2O3-related buffer layers",J. Vac. Sci. Technol. A 35, 061513-1(2017)

    2.S. W. Wen, B. H. Huang, J. J. Kang, T. Y. Lin, H. F. Hsu, H. C. Ni, C. H. Hou, H. T. Lai, and J. R. Gong*,“Characterization of Radial ZnO-Core/ZnS-Shell Nanowire Heterostructures ALD-Deposited at Atmospheric Pressure Using DEZn, N2O and DTBS”,ECS Journal of Solid State Science and Technology,5(12)P663-P666(2016)

    3.H.C. Ni, C.H. Lin , K.Y. Lo , C.H.Tsai , T. P. Chen , J. L. Tsai , and J. R. Gong*, "Properties of Cu2ZnSnS4 Films by Sulfurization of CuS-SnS-ZnS Precursors Using Ditert-butylsufide at Atmospheric Pressure"ECS J. Solid state sci. and Tech. 4,Q72(2015)

    4.K. Y. Yen , C. H. Chiu , C. Y. Hisao , C. W. Li, C. H. chou, K. Y. Lo, T. P. Chen, C. H. Lin,T. Y. Lin, and J. R. Gong*,〃Characteristics of GaN-based LEDs using Ga-doped or In –doped ZnO transparent conductive layers grown by atomic layer deposition〃,J. Cryst. Growth 387, 91 (2014).

    5.K. Y. Yen , C. H. Chiu , C. W. Li , C. H. Chou , P. S. Lin ,T. P. Chen ,T. Y. Lin and  J. R. Gong* ,        "Performance of InGaN/GaN MQW LEDs using Ga-doped ZnO TCLs prepared by ALD" ,IEEE photonics Technol Lett. 24, 2105 (2012)

    6.T. P. Chen, H. Y. Shih, J. T. Lian, J. H. Chen, P. S. Lin, T. Y. Lin, J. R. Gong*, and Y. F. Chen, “Electro-colorimetric hydrogen gas sensor based on PT-functionalized In2O3 nano pushpins and In GaN / GaN MQWs” Optics Express 20, 17136(2012)

    7.S.Y. Hsiao , P.C. Yang , H.C. Ni, K.Y.Yen , C.H. Chiu , P.S. Lin, H.J. Chen, C.H. Wu, S.C. Liang , G.Y.Ni , F.W. Jih, C.D. Chiang, and J.R. Gong *,“Characteristics of Cu(In,Ga)Se2 films prepared by atmospheric pressure selenization of Cu-In-Ga precursors using ditert-butylselenide as Se source”, Journal of Electrochemical Society 159,H378(2012)

    8.W. H. Chi, K. Y. Yen, H. L. Su, S. C. Li, J. R. Gong*, "On the physical properties of In2O3 films grown on (0001) sapphire substrates by atomic layer deposition", J. Vac. Sci. Tech. A 29, 03A105 (2011).

    9.K. P. Liu, K. Y. Yen, P. Y. Lin, J. R. Gong*, K. D. Wu and W. L. Chen, "Structural characteristics of ZnO films grown on (0001) or (11-20) sapphire substrates by atomic layer deposition", J. Vac. Sci. Tech. A 29, 03A101 (2011).

    10.Y.T. Lin, P. H. Chung, H. W. Lai, H. L. Su, D. Y. Lyu, K. Y. Yen, T. Y. Lin, C. Y. Kung, J. R. Gong*,"Self- limiting growth of ZnO films on (0001) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide" Applied Surface Science 256,819-822(2009)

    11.K.Y. Yen,K. P. Liu, J. R. Gong* ,K. Y. Tsai,D. Y. Lyu,T. Y. Liu, G. Y. Ni ,and F. W. Jih ,''Growth and Characterization of Zno films on (11-20)sapphire substrates by atomic layer deposition using DEZn and N2O",J.of Materials Science: Materials in Electronics 20,1255-1259(2009).

    12.P. Y. Lin,J. R. Gong*,P. C.Li, T.Y. Lin, D. Y. Lyu,D. Y. Lin, H. J. Lin,T. C. Lin,K. J. Chang,and W. J. Lin,"Optical and structural characteristics of ZnO films grown on (0001) sapphire substrates by ALD using DEZn and N2O", J. Crystal Growth 310,3024-3028(2008). 

    13.C. L. Wang, M. C. Tsai, J. R. Gong* , W. T. Liao, P. Y. Lin, K. Y. Yen, C. C. Chang, H. Y. Lin, S. K. Hwang, “Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes”, Mat. Sci. and Eng. B 138, 180-183 (2007)

    14.W. T. Liao, J. R. Gong* , C. L. Wang, W. L. Wang, C .C. Tsuei, C. Y. Lee, K. C. Chen, J. R. Ho and R. C. Luo, “ Comparison of the Performance of InGaN/AlGaN MQW LEDs Grown on c-Plane and a-Plane Sapphire Substrates ”, Electrochemical and Solid-State Letters Vol. 10 (1), H5-H7 (2007)

    15.C. L. Wang, W. L. Wang, W. T. Liao, J. R. Gong , C. K Lin and T. Y. Lin, “Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films”, J. Crystal Growth vol. 297, 339-344(2006).

    16.W. T. Liao, J. R. Gong, S. W. Lin, C. L. Wang, K. C. Chen, J. B. Shi, S. Y. Chang and K. J. Lin, “The properties of AlGaN films and AlGaN/GaN heterostructures grown on (11-20) sapphire substrates”, Journal of Materials Science: Materials in Electronics Vol. 17, 847-850 (2006)

    17.W. L. Wang, J. R. Gong* , C. L. Wang, W. T. Liao, J. L. He, Y. C. Chi and J. B. Shi, “Characteristics and interactions of threading dislocations in GaN films grown on (0001) sapphire substrates with or without short-period superlattice insertion”, Jpn . J. Appl . Phys.(Pt.1) Vol. 45, 6888-6892 (2006)

    18.C.L. Wang, J.R. Gong* , M.F. Yeh, B.J. Wu, W.T. Liao, T.Y. Lin, and C.K. Lin, "Improvement in the Characteristics of GaN-Based Light-Emitting Diodes by Inserting AlGaN-GaN Short-Period Superlattices in GaN Underlayers ", IEEE Photon. Technol. Lett. vol. 18, 1497-1499 (2006)

    19.Y.L. Tsai, J.R. Gong* , T.Y. Lin, H.Y. Lin, Y.F Chen, and K.M Lin, "Morphological and luminescent characteristics of GaN dots deposited on AlN using alternate supply of TMG and NH 3 ", Appl. Surf. Sci. Vol. 252, 3454-3459 (2006)

    20.W. T. Liao, J. R. Gong* , S. W. Lin, C. L. Wang, T. Y. Lin, K. C. Chen, Y. C. Cheng, and W. J. Lin, “Growth of AlGaN and GaN films on (11-20) Al 2 O 3 substrates and the influence of V/III ratio on the properties of GaN films”, J. Crystal Growth vol. 286, 28-31(2006).

    21.C. L. Wang, J. R. Gong* , W. T. Liao, W. L. Wang, T. Y. Lin, and C. K. Lin, “On the characteristics of AlGaN films grown on (111) and (001) Si substrates”, Solid State Communications vol. 137, 63-66(2006)

    22.C. L. Wang, J. R. Gong* , W. T. Liao, C. K. Lin, and T. Y. Lin, “Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers, Thin Solid Films vol. 493, 135-138 (2005 )

    23.C. L. Wang and J. R. Gong* ,” Properties of LT-AlGaN films and HT-GaN films using LT-AlGaN buffer layers grown on (0001) sapphire substrates”, J. Materials Science: Materials in Electronics vol. 16, 107-110 (2005).

    24.Y. L. Tsai, J.R. Gong* , K.M. Lin, D.Y. Lin, and E.C. Chen, “Optical charateristics of GaN films overgrown on wet-etched GaN templates”, Jpn. J. Appl. Phys.(Pt.1) vol. 44, 1732-1733 (2005).

    25.B. H. Shih, J. R. Gong* , S. W. Lin, Y. L. Tsai, W. T. Liao, T. Y. Lin, Y. T. Lee, and J. G. Chang,"On the optical properties and microstructures of GaN films inserted with low-temperature Al 0.8 Ga 0.2 N interlayers", J. Crystal Growth vol.276, 362 (2005)

    26.Y.L. Tsai and J. R. Gong* , "Influence of low-temperature AlGaN intermediate multilayer structures on the growth mode and properties of GaN", Optical Materials vol. 27, 425 (2004)

    27.Y. L. Tsai, and J. R. Gong* , "Improvement in optical properties and surface morphologies of GaN films using low-temperature GaN interlayers", J. Crystal Growth vol. 263, 176-180(2004)

    28.J. R. Gong* , C. W. Huang, S. F. Tseng, T. Y. Lin, K. M. Lin, W. T. Liao, Y. L. Tsai, B. H. Shi, and C. L. Wang, " Behaviors of Al x Ga 1-x N(0.5 ≦ x ≦ 1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films ” , J. Crystal Growth vol. 260, 73-78(2004).

    29.J. R. Gong* , M. F. Yeh, and Y. L. Tsai, ”Deposition of GaN films on (111) Si substrates by alternate supply of TMG and NH 3 ” , Optical Materials vol. 24, 615-619 (2004)

    30.J. R. Gong* , S. F. Tseng, C. W. Huang, Y. L. Tsai, W. T. Liao, C. L. Wang, B. H. Shi, and T. Y. Lin, ”Effects of Al-containing intermediate III-nitride strained multilayers on the threading dislocation density and optical properties of GaN films”, Jpn. J. Appl. Phys.(Pt.1) vol. 42, 6823-6826 (2003)

    31.J. R. Gong* , S. J. Hou, and S. F. Tseng, ”Characteristics of misfit dislocations in the GaInP/GaAs heterostructures grown by metalorganic chemical vapor deposition”, J. Crystal Growth vol.253, 46-51 (2003)

    32.J. R. Gong* , W. T. Liao, S. L. Hsieh, P. H. Lin, and Y. L. Tsai, ”Strain-induced effect on the Al incorporation in AlGaN films and the properties of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition”, J. Crystal Growth vol.249, 28–36 (2003)

    33.J. R. Gong* , M. F. Yeh, and C. L. Wang, “Growth and characterization of GaN and AlN films on (111) and (001) Si substrates”, J. Crystal Growth vol.247, 261-268 (2003)

    34.Y. L. Tsai, C. L. Wang, P. H. Lin, W. T. Liao, and J. R. Gong* , ”Observation of compositional pulling phenomenon in Al x Ga 1-x N (x<0.4),Appl. Phys. Lett. 82, 31-33 (2003).

    35.J. R. Gong* , C. L. Yeh, Y. L. Tsai, C. L. Wang, T. Y. Lin, W. H. Lan, Y. D. Shiang, and Y. T. Cherng, “Influence of AlN/GaN strained multi-layers on the threading dislocations in GaN films grown by alternate supply of metalorganics and NH 3 ” , Mat. Sci. and Eng. B 94, 155-158 (2002)

    36.H. C. Hsin, W. T. Lin, J. R. Gong , and Y. K. Fang, ” Cu3Ge Schottky contacts on n-GaN ” , J. Materials Science: Materials in Electronics vol.13, 203-206 (2002)