國立中興大學物理學系

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林中一

Tel 22840427 分機711   理論凝態物理 / 半導體理論
  • 學歷 Education
    俄亥俄州州立大學物理系博士
    東海大學物理學士
     
    經歷 Work Experience
    國立中興大學物理系教授(2007-present)
    國立中興大學物理系系主任(2009/08-2012/07)
    國立中興大學理學院半導體研究中心主任(2008/06-2009/10)
    國立中興大學物理系副教授(1988-2007)
    美國維吉尼亞大學博士後研究(1987-1988)
      
    榮譽 Honor List
    104學年優良導師
    100學年服務優良教師獎
    96學年優良導師
    96學年熱心服務教師獎
    92學年優良導師
  • 理論凝態物理 / 半導體理論
    1. Chen, KT; Fan, JW; Chang, ST; Lin, CY, “Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET”, J Nanosci Nanotechnol. 2015 Mar;15(3):2168-72.
    2. Shu-Tong Chang, Jun Wei Fan, Chung-Yi Lin*, Ta-Chun Cho, Ming Huang, “Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si1-xGex alloys channel on (110) and (111) Si substrates”, J. Appl. Phys. 111, 033712 (2012) (SCI, IF:2.064)
    3. Shih-Jye Sun, Jun Wei Fan, and Chung-Yi Lin, “The electrical conduction variation in strained carbon nanotubes”, Physica E 44, Issue 4 (2012) 803-807. (SCI, IF:1.304)
    4. Shih-Jye Sun and Chung-Yi Lin, “Hybrid-grahene gas sensor-Model simulation”, Europhys. Lett.96, (2011) 10002.(SCI. IF: 2.753)
    5. S.J. Sun, C.Y. Lin, and C.F. Yu, “Transport properties of orbitally hybridized organic semiconductors”, Eur. Phys. J. B 83, (2011) 173-179. (SCI. IF: 1.575)
    6. Shu-Tong Chang, Jacky Huang, Ming Tang, and Chung-Yi LinEffective mass and subband structure of strained Si in a PMOS inversion layer with external stress”, Thin Solid Films 518 (2010) S154–S158. (SCI, IF:1.909)
    7. Karel Kral and Chung-Yi Lin,”Electron-phonon coupling in nanodevices”, Physica E, 42, (2010)618-621(SCI, IF:1.177)
    8. Min-Hung Lee, Shu-Tong Chang, Yi-Chun Wu, Ming Tang, and Chung-Yi Lin, “Mechanical Bending Cycles of Hydrogenated Amorphous Silicon Layer on Plastic Substrate by Plasma-Enhanced Chemical Vaop Deposition for Use in Flexibel Displays”, Jpn. J. Appl. Phys. 48 (2009) 021301. (SCI, IF: 1.138)
    9. S. T. Chang, S. H. Liao, and C.-Y. Lin, The Impact of Uniaxial Stress on the Subband Structure and Mobility of Strain Si NMOSFETs. ” (Accepted by Thin Solid Films, 2008).(SCI)
    10. K. Kral and C.-Y. Lin, Phonon Excess Heating in Electronic Relaxation Theory in Quantum Dots. Int. J. Mod. Phys. B (IJMPB), Vol. 22, Issue 20, 2008, pp. 3439 - 3460 (SCI)
    11. Shu-Tong Chang, S. H. Liao, Wei-Ching Wang, Chung-Yi Lin, and Jun-Wei Fan, Impact of Stress Engineering on Electron Mobility and Ballistic Current for Strianed Si NMOSFETs, J. of the Korean Phys. Soc. , Vol. 53, No. 2, 2008, pp. 1024~1029.(SCI)
    12. Shu-Tong Chang ,Wei-Ching Wang, Jacky Huang, Shu-Hui Liao, and Chung-Yi Lin, Exploring Width Effect on Performance Enhancement in NMOSFETs with Silicon-Carbon Alloy Stressor and Tensile Stress Silicon Nitride Linear, Applied Surface Science , 254( 2008)6203-6207.(SCI)
    13. S. T. Chang, C. Y. Lin, S. H. Liao, Theoretical Study of Electron Mobility for Silicon-Caron Alloys,Applied Surface Science, 254( 2008) 6177-6181 (SCI)
    14. Chung-Yi Lin, Shu-Tong Chang, Jacky Huang, Wei-Ching Wang, and Jun Wei Fan, “ Impact of Source/Drain Si 1-y C y Stressors on Silicon-on-Insulator NMOSFETs”, Jpn. J. Appl. Phys. Vol. 46, No. 4B, (2007) 2107-2111.
    15. Shu-Tong Chang and C.Y. Lin , “ Electron Transport Model for Strained Silicon-Carbon Alloy”, Jpn. J. Appl. Phys. Vol. 44, No. 4B, (2005) 2257-2262.
    16. C.Y. Lin, S.T. Chang, and C.W. Liu, “ Hole Effective Mass in Strained Si 1-x C x Alloys”, J. Appl. Phys. Vol. 96, No. 9, (2004) 5037-5041.
    17. Sung-Ping Szu and Chung-Yi Lin, “AC Impedance Studies of Copper Doped Silica Glass”, Mater. Chem. Phys., Vol. 82, Issue:2, (2003) 295-300.
    18. S.T. Chang, C.Y. Lin , and C.W. Liu, “Energy band structure of strained Si 1-x C x alloys on Si(001) substrate”, J. Appl. Phys. Vol. 92, No. 7 (2002) 3717-3723.
    19.  K. Kral, Z. Khas, P. Zdenek, M. Cernansky, and C.Y. Lin, "Electron-Energy Relaxation in Polar Semiconductor Double Quantum Dots", Int. J. of Modern Phys. B, Vol. 15, No. 27 (2001) 3503-3512.
    20. K. Kral, Z. Khas C. Y. Lin, "Optical Line-Shape and Time-resolved Response in Quantum Dots", Phys. stat. Sol. (b) 2001, 224, No. 2, 453-456.
    21. C.Y. Lin. C.W. Liu, and W. Z. Chen, "Valence band properties of relaxed ternary group IV semiconductor alloys", Jpn. J. Appl. Phys. Vol. 39 (2000) suppl. 39-1, 244-247.
    22. K. Kral, Z. Khas, C.Y. Lin, and S.H. Lin, “Homogeneous line-width of optical and multiple electron-LO-phonon scattering in quantum dots”, J. Chin. Chem. Soc. 47, 753-757 (2000).
    23. K. Kral, Z. Khas, C.Y. Lin, and S.H. Lin, “Optical line-shape and the time-domain photon echo measurement in semiconductor quantum dots”, Optics Comm. 180(2000) 271-275.
    24. C. Y. Lin, C. W. Liu and L. J. Lee, Valence Band Properties of Relaxed Ge1-xCx Alloys, Materials Chemistry and Physics, 52,31,1998.
    25. C. Y. Lin and C. W. Liu, Hole Effectuve Masses in Relaxed Si1-xCx and Si1-yGey Alloys, Appl. Phys. Lett., 70(11),1441,1997
    26. Sungping Szu,Chung-Yi Lin and Chun-Hung Lin. 1994. Sol-Gel Prepared Copper Doped SiO2 Glasses. Journal of Sol-Gel Science and Technology, 2:881-884.
    27. G.H. Huang, T.H. Her,C. Y. Lin and H.C. Ku. 1990. Vortex Lattice Melting of 32 K Superconductor Nd1.85Ce0.5CuO4- σ. Physica B, 165&166:1155.